Author:
Lu Albert,Marshall Jordan,Wang Yifan,Xiao Ming,Zhang Yuhao,Wong Hiu Yung
Funder
National Science Foundation
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. GaN FinFETs and trigate devices for power and RF applications: review and perspective;Zhang;Semicond. Sci. Technol.,2021
2. (Ultra)Wide-Bandgap Vertical Power FinFETs;Zhang;IEEE Trans Electron Devices,2020
3. Recent development of vertical GaN power devices;Oka;Jpn. J. Appl. Phys.,2019
4. Guard ring assisted RESURF: a new termination structure providing stable and high breakdown voltage for SiC power devices;Kinoshita,2002
5. High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination;Wang;Appl. Phys. Lett.,2018
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