Undoped junctionless EZ-FET: Model and measurements
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications;Cristoloveanu;IEEE Trans Electron Devices,2000
2. Batude P et al. 3D sequential integration: application-driven technological achievements and guidelines. In: IEEE international electron devices meeting (IEDM); 2017. p. 3.1.1–3.1.4. doi: 10.1109/IEDM.2017.8268316.
3. Vandooren A et al. Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections. In: IEEE symposium on VLSI technology and circuits (VLSI technology and circuits); 2022. p. 330–1. doi: 10.1109/VLSITechnologyandCir46769.2022.9830400.
4. Alepidis M et al. A simple test structure for the electrical characterization of front and back channels for advanced SOI technology development. Solid-State Electron 2021;185:108047. doi: 10.1016/j.sse.2021.108047.
5. Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's;Lim;IEEE Trans Electron Devices,1983
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Methodology for parameters extraction with undoped junctionless EZ-FETs;Solid-State Electronics;2024-07
2. Low Temperature Junction Formation for EZ-FET;IEEE Journal of the Electron Devices Society;2023
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