Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects-Reference-Cited by-同舟云学术

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Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects

Published:2002-05 Issue:1-2 Volume:24 Page:257-261
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Ihaddadene M.,Marcon J.,Idrissi-Benzohra M.,Ketata K.,Demichel S.,Flicstein J.,Pelouard J.L.,Ketata M.

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference15 articles.

1. Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications

2. N. Matine, Dr. Thesis, Paris-Orsay University, France, 1996

3. Diffusion mechanism of zinc and beryllium in gallium arsenide

4. Modeling the diffusion of grown‐in Be in molecular beam epitaxy GaAs

5. Modeling the diffusion of implanted Be in GaAs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Grown-in beryllium diffusion in indium gallium arsenide: An ab initio, continuum theory and kinetic Monte Carlo study;Acta Materialia;2017-02

2. Simulation of p-type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs;physica status solidi (b);2006-10

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