Effects of the high-pressure annealing process on the reflow phenomenon of copper interconnections for large scale integrated circuits-Reference-Cited by-同舟云学术

Effects of the high-pressure annealing process on the reflow phenomenon of copper interconnections for large scale integrated circuits

Published:2003-02 Issue:1-2 Volume:425 Page:265-274
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Onishi Takashi,Fujii Hideo,Yoshikawa Tetsuya,Munemasa Jun,Inoue Takao,Miyagaki Aki

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Thermal‐stress‐induced voiding in narrow, passivated Cu lines

2. G.A. Dixit, M.F. Chisholm, M.K. Jain, T. Weaver, L.M. Ting, S. Poarch, K. Mizobuchi, R.H. Havemann, in: J. Aitken, R. Sivan, S. Hillenius (Eds.), International Electron Devices Meeting, San Francisco, USA, December 11–14, 1994, IEDM '94 Technical Digest (1994) p. 105

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