Properties of a-SiC:H films deposited in high power regime-Reference-Cited by-同舟云学术

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Properties of a-SiC:H films deposited in high power regime

Published:2003-03 Issue:1-2 Volume:427 Page:279-283
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ambrosone G.,Ballarini V.,Coscia U.,Ferrero S.,Giorgis F.,Maddalena P.,Patelli A.,Rava P.,Rigato V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Optical depth profiling of band gap engineered interfaces in amorphous silicon solar cells at monolayer resolution

2. D. Kruangam, in: J. Kanacki (Ed.), Amorphous and Microcrystalline Semiconductors Devices, vol. I, Artech House, Boston, Massachusetts (Chapter 6)

3. A hydrogenated amorphous Si/SiC heterojunction phototransistor

4. Silicon carbide as a new MEMS technology

5. Optical absorption and luminescence properties of wide-band gap amorphous silicon based alloys

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1. Formation of Al-incorporated SiC thin films by chemical vapor deposition of vinylsilane mixed with trimethylaluminum;Japanese Journal of Applied Physics;2024-02-22

2. Correlation study of photoluminescence properties and mechanism of hydrogenated amorphous silicon carbide films;Journal of Luminescence;2019-08

3. The evolution of PL properties of hydrogenated Si-rich silicon carbide/amorphous carbon nano-multilayer films grown by PECVD;Optik;2019-01

4. Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films;SOLID STATE ELECTRON;2018

5. Effects of carbon content and plasma power on room temperature photoluminescence characteristics of hydrogenated amorphous silicon carbide thin films deposited by PECVD;Thin Solid Films;2017-08

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