Formation of an interfacial MoSe2 layer in CVD grown CuGaSe2 based thin film solar cells-Reference-Cited by-同舟云学术

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Formation of an interfacial MoSe2 layer in CVD grown CuGaSe2 based thin film solar cells

Published:2003-05 Issue: Volume:431-432 Page:398-402
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Würz R.,Fuertes Marrón D.,Meeder A.,Rumberg A.,Babu S.M.,Schedel-Niedrig Th.,Bloeck U.,Schubert-Bischoff P.,Lux-Steiner M.Ch.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. MoSe 2 layer formation at Cu(In,Ga)Se 2/Mo Interfaces in High Efficiency Cu(In1- xGa x)Se 2 Solar Cells

2. Electrical properties of the Cu(In,Ga)Se2/ MoSe2/Mo structure

3. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

4. CVD of CuGaSe2 for thin film solar cells with various transport agents

5. CVD of CuGaSe2 for thin film solar cells employing two binary sources

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2. Vertical electric-field controlled electronic properties of MoSe2/MnPSe3 van der Waals heterojunction;Physica B: Condensed Matter;2023-09

3. Review article on the lattice defect and interface loss mechanisms in kesterite materials and their impact on solar cell performance;Solar Energy;2021-12

4. Integrated photo-absorption and improved charge transport kinetics in atomically thin MoSe2-incorporated nanostructured ZnO photo-anodes for dye-sensitized solar cells;Applied Physics A;2021-11-29

5. Comparison of Mo and ITO back contacts in CIGSe solar cells: Vanishing of the main capacitance step;Progress in Photovoltaics: Research and Applications;2021-10-21

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