Misfit dislocations of epitaxial (110) niobium‖ (112̄0) sapphire interfaces grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Misfit dislocations of epitaxial (110) niobium‖ (112̄0) sapphire interfaces grown by molecular beam epitaxy

Published:2000-01 Issue:1-2 Volume:358 Page:94-98
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Grier E.J.,Jenkins M.L.,Petford-Long A.K.,Ward R.C.C.,Wells M.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Atomic structure of epitaxial Nb-Al2O3interfaces I. Coherent regions

2. Atomic structure of epitaxial Nb-Al2O3interfaces II. Misfit dislocations

3. High-resolution electron microscopy studies of Nb/Al2O3 interfaces

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1. Tuning the stress state in Nb-thin films by lateral size confinement;Acta Materialia;2022-01

2. High-resolution x-ray scattering from epitaxial thin films of Y/Nb on Al2O3;Journal of Physics: Condensed Matter;2020-06-18

3. The Resistivity Size Effect in Epitaxial Nb(001) and Nb(011) Layers;IEEE Transactions on Electron Devices;2019-08

4. Structural Phase Transitions in Niobium Hydrogen Thin Films: Mechanical Stress, Phase Equilibria and Critical Temperatures;ChemPhysChem;2019-06-27

5. Tayloring surface morphologies and stress states of thin niobium epitaxial films on sapphire substrates;Thin Solid Films;2019-06

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