Etch-induced damage in single crystal Si trench etching by planar inductively coupled Cl2/N2 and Cl2/HBr plasmas-Reference-Cited by-同舟云学术

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Etch-induced damage in single crystal Si trench etching by planar inductively coupled Cl2/N2 and Cl2/HBr plasmas

Published:1999-03 Issue:1-2 Volume:341 Page:168-171
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lee Y.J,Hwang S.W,Yeom G.Y,Lee J.W,Lee J.Y

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. B. Davari, C. Koburger, T. Furukawa, et al., IEDM Tech. Dig. 88 (1988).

2. A. Chatterjee, J. Esquivel, S. Nag, et al., 1996 Symp. VLSI Technol. Dig. Tech. Pap., 156 (1996).

3. A Novel Shallow Trench Isolation Technique

4. Profile Control Possibilities for a Trench Etch Process Based on Chlorine Chemistry

5. Effects on sidewall profile of Si etched in BCl3/Cl2 chemistry

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