Influence of interface states and deep levels on output characteristics of InAlAs/InGaAs/InP HEMTs
Author:
Publisher
Elsevier BV
Subject
Biomaterials,Bioengineering,Mechanics of Materials
Reference14 articles.
1. Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
2. Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunction
3. Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process
4. Capacitance transient analysis of molecular-beam epitaxial n-In0.53Ga0.47As and n-In0.52Al0.48 As
5. Optical and Electrical Measurements of Low-Temperature InAlAs
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3. Analysis of the relationship between the kink effect and the indium levels in MOS transistors;Materials Science and Engineering: B;2013-12
4. Investigation of the kink effect in indium-doped silicon for sub 100 nm N channel MOSFET technology;International Journal of Nanotechnology;2013
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