Dose-dependent dynamics of nanocluster distribution in silicon implanted with Te+ and Pb+ ions: computer simulation and TEM study

Author:

Bankov P,Kalitzova M,Karpuzov D,Zollo G,Vitali G,Pizzuto C,Angelov Ch,Faure J,Kilian L

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference8 articles.

1. Ryssel H, Ruge J. Ion implantation. Russian ed. Moscow: Nauka, 1983. p. 77.

2. Kalitzova M, Zollo G, Yankov RA, Angelov Ch, Simov S, Vitali G, Pizzuto C, Faure J, Kilian L, Bonhomme P, Manno D, Voelskow M. Jpn J Appl Phys, in press.

3. Tridyn — A TRIM simulation code including dynamic composition changes

4. Ignatova V, Chakarov I. Surface and Coatings Technology 2002; in press.

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1. Diffusion of Pb in (100) Si under electron beam annealing following dual ion implantations of Pb/Ne, Pb/O and Pb/N;Vacuum;2010-04

2. Te+ implanted silicon structure and electrical resistance dependence on high frequency electromagnetic field annealing;Journal of Physics: Conference Series;2008-05-01

3. Sub-surface retention of Pb atoms in silicon after low-energy ion implantation and electron beam annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04

4. Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01

5. High frequency electromagnetic field processing of amorphous silicon layers containing nanoclusters produced by implantation of metal ions in Si(100) matrix;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-02

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