The Effect of the Pillar Ripple on the Reverse Recovery in Superjunction MOSFETs-Reference-Cited by-同舟云学术

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The Effect of the Pillar Ripple on the Reverse Recovery in Superjunction MOSFETs

Published:2022-06 Issue: Volume:2 Page:100009
ISSN:2772-3704
Container-title:Power Electronic Devices and Components
language:en
Short-container-title:Power Electronic Devices and Components

Author:

Kang H.^ORCID,Donato N.,Udrea F.

Publisher

Elsevier BV

Reference12 articles.

1. Superjunction Power Devices, History, Development, and Future Prospects;Udrea;IEEE Trans. Electron Devices,2017

2. Static and Dynamic Figures of Merits (FOM) for Superjunction MOSFETs;Kang,2019

3. CoolMOSTM C7 : Mastering the Art of Quickness - Application note;Infineon,2013

4. Analysis of the reverse recovery oscillation of superjunction MOSFET body diode;Xue;Solid. State. Electron.,2017

5. Semisuperjunction MOSFETs: new design concept for lower on-resistance and softer reverse-recovery body diode;Saito;IEEE Trans. Electron Devices,2003

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