On short channel effects in high voltage JFETs: A theoretical analysis

Author:

Monaghan F.ORCID,Martinez A.,Evans J.,Fisher C.,Jennings M.

Funder

Llywodraeth Cymru

Engineering and Physical Sciences Research Council

European Social Fund Plus

Publisher

Elsevier BV

Reference26 articles.

1. Fundamentals of power semiconductor devices;Baliga,2010

2. An accurate model of threshold voltage and effect of high-k material for fully depleted graded channel DMDG MOSFET;Chakrabarti;Silicon,2022

3. Auger recombination in 4H-SiC: Unusual temperature behavior;Galeckas;Applied Physics Letters,1997

4. Influence of lateral straggling of implated aluminum ions on high voltage 4H-SiC device edge termination design;Jiang,2018

5. Experimental study on short-channel effects in double-gate silicon carbide JFETs;Kaneko;IEEE Transactions on Electron Devices,2020

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