Improving thermoelectric properties in double half-Heusler M8FexNi8−xSb8 (M = TiZrHfNb)-InSb compounds via synergistic multiscale defects and high-mobility carrier injection
Author:
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Publisher
Elsevier BV
Reference38 articles.
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2. Double half-Heuslers;Anand;Joule,2019
3. Atomic site-targeted doping in Ti2FeNiSb2 double half-Heusler alloys: ZT improvement via selective band engineering and point defect scattering;Hasan;J. Alloys Compd.,2023
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5. Enhanced thermoelectric properties of Zr0.85–xHfxNb0.15–yTayCoSb medium-entropy alloys: tradeoff between “what to alloy” and “how much to alloy”;Chen;Chem. Mater.,2023
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