The investigation of a novel approach in the simulation of the trap levels effect on the conduction in a GaAs P+νN+ diode-Reference-Cited by-同舟云学术

The investigation of a novel approach in the simulation of the trap levels effect on the conduction in a GaAs P+νN+ diode

Published:2009-02 Issue:3 Volume:209 Page:1495-1503
ISSN:0924-0136
Container-title:Journal of Materials Processing Technology
language:en
Short-container-title:Journal of Materials Processing Technology

Author:

Bouabdallah B.,Bourezig Y.,Brahimi R.

Publisher

Elsevier BV

Subject

Industrial and Manufacturing Engineering,Metals and Alloys,Computer Science Applications,Modeling and Simulation,Ceramics and Composites

Reference22 articles.

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