Monte Carlo simulation of recovery process after MBE growth on GaAs( 100 )
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference11 articles.
1. Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001)
2. Misorientation dependence of epitaxial growth on vicinal GaAs(001)
3. Kinetics of homoepitaxial growth on GaAs(100) studied by two-component Monte Carlo simulation
4. Monte Carlo simulation of homoepitaxial growth on two-component compound semiconductor surfaces
5. Role of As during homoepitaxial growth on GaAs(001) studied using Monte Carlo simulation
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5. Feedback control of surface roughness of GaAs (0 0 1) thin films using kinetic Monte Carlo models;Computers & Chemical Engineering;2004-12
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