Modelling sublimation and atomic layer epitaxy in the presence of competing surface reconstructions-Reference-Cited by-同舟云学术

Modelling sublimation and atomic layer epitaxy in the presence of competing surface reconstructions

Published:2001-08 Issue:1-2 Volume:488 Page:L553-L560
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Ahr M.,Biehl M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference15 articles.

1. Island Nucleation and Growth on Reconstructed GaAs(001) Surfaces

2. Model for nucleation in GaAs homoepitaxy derived from first principles

3. I. Suemune, A. Ishibashi (Eds.), Proceedings of the Ninth International Conference on II–VI Compounds, Kyoto, 1999, J. Cryst. Growth 214–215 (2000)

4. J. Cibert, S. Tatarenko, Defect Diffus Forum 150–151 (1997) 1 and references therein

5. Simultaneous layer-by-layer and step-flow sublimation on the CdTe(001) surface derived from a diffraction analysis

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