Reply to ‘Comment on “Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope” by H.J.W. Zandvliet’-Reference-Cited by-同舟云学术

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Reply to ‘Comment on “Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope” by H.J.W. Zandvliet’

Published:2000-03 Issue:1-3 Volume:449 Page:L265-L266
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Yang H.Q,Zhu C.X,Gao J.N,Xue Z.Q,Pang S.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference5 articles.

1. Comment on “Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope” by H.Q. Yang, C.X. Zhu, J.N. Gao, Z.Q. Xue, S.J. Pang [Surface Science 429 (1999) L481–L485]

2. Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope

3. Spontaneous Formation of Stress Domains on Crystal Surfaces

4. Stabilities of single-layer and bilayer steps on Si(001) surfaces

5. Metastable structures of Si(111) formed by laser-quenching

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interacting dimer rows on terraces: Reconstructed Si(001) surfaces;Physical Review B;2005-07-13

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