Electronic and structural properties of the As vacancy on the (110) surface of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference62 articles.
1. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
2. Layer-by-layer removal of GaAs(110) by bromine
3. Etch pit development and growth on GaAs(110)
4. Atom-selective imaging of the GaAs(110) surface
5. Contribution of Surface Resonances to Scanning Tunneling Microscopy Images: (110) Surfaces of III-V Semiconductors
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1. Atomically resolved study of initial stages of hydrogen etching and adsorption on GaAs(110);Physical Review Materials;2022-12-27
2. Electric manipulation of the Mn-acceptor binding energy and the Mn-Mn exchange interaction on the GaAs (110) surface by nearby As vacancies;Physical Review B;2015-07-14
3. Simulated non-contact atomic force microscopy for GaAs surfaces based on real-space pseudopotentials;Applied Surface Science;2014-06
4. Hydrogen on III-V (110) surfaces: Charge accumulation and STM signatures;Physical Review B;2013-07-25
5. Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds;The Journal of Physical Chemistry C;2007-04-07
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