Surface etching of InP(100) by chlorine-Reference-Cited by-同舟云学术

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Surface etching of InP(100) by chlorine

Published:1998-11 Issue:1 Volume:418 Page:46-54
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Hung Wei-Hsiu,Hsieh Jyh-Tsung,Hwang Huey-Liang,Hwang Hsin-Yen,Chang Che-Chen

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference43 articles.

1. Preferential sputtering of InP: an AES investigation

2. Chlorine-Based Smooth Reactive Ion Beam Etching of Indium-Containing III-V Compound Semiconductor

3. Dry-etching techniques and chemistries for III–V semiconductors

4. Silver contact on GaAs (001) and InP (001)

5. The structure of the InP(001)-(4 × 2) surface studied by scanning tunneling microscopy

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth kinetics of Ga x In(1−x)P nanowires using triethylgallium as Ga precursor;Nanotechnology;2018-07-19

2. Synchrotron Photoemission Spectroscopy Study of p-GaInP2(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions;The Journal of Physical Chemistry C;2017-04-14

3. Comparison of wet chemical treatment and Ar-ion sputtering for GaInP2(100) surface preparation;Materials Science in Semiconductor Processing;2016-08

4. Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures;Nanotechnology;2012-05-28

5. Global Model of $\hbox{Cl}_{2}\hbox{/Ar}$ High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP;IEEE Transactions on Plasma Science;2012-04

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