Submonolayer Si deposition at low temperatures on the GaAs(001)-(2×4) surface studied by scanning tunneling microscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. Compensating surface defects induced by Si doping of GaAs
2. Theory of two-photon down-conversion in the presence of mirrors
3. The location of silicon atoms and the initial stages of formation of the interface studied by STM
4. Reconstruction of the GaAs(001) surface induced by submonolayer Si deposition
5. Structural and doping properties of molecular beam epitaxy-grown Si-doped GaAs(001) surfaces
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