Czochralski grown concentration profiles in the undoped and Te-doped GaSb single crystals-Reference-Cited by-同舟云学术

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Czochralski grown concentration profiles in the undoped and Te-doped GaSb single crystals

Published:1992-11 Issue: Volume:209 Page:285-294
ISSN:0040-6031
Container-title:Thermochimica Acta
language:en
Short-container-title:Thermochimica Acta

Author:

Štěpánek B.,Šesták'ová V.

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,Instrumentation

Reference19 articles.

1. Studies of the Ga1-xInxAs1-ySby quaternary alloy system I. liquid-phase epitaxial growth and assessment

2. Compound Semiconductors;Allred,1962

3. A novel encapsulant material for LEC growth of GaSb

4. Observation of Growth Striations in Undoped GaSb Single Crystals

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and characterization of indium antimonide and gallium antimonide crystals;Bulletin of Materials Science;2001-10

2. Diffusion mobility and defect analysis in GaSb;Journal of Crystal Growth;1998-05

3. Decrease in free carrier concentration in GaSb crystals using an ionized hydrogen atmosphere;Materials Chemistry and Physics;1996-07

4. Various methods for the growth of GaSb single crystals;Journal of Crystal Growth;1996-07

5. Properties of Doped GaSb Single Crystals Grown by the Czochralski Method;Crystal Research and Technology;1996

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