Gate all around carbon nanotube field effect transistor espoused discrepancy cascode pass transistor adiabatic logic for ultra-low power application-Reference-Cited by-同舟云学术

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Gate all around carbon nanotube field effect transistor espoused discrepancy cascode pass transistor adiabatic logic for ultra-low power application

Published:2025-01 Issue: Volume:100 Page:102260
ISSN:0167-9260
Container-title:Integration
language:en
Short-container-title:Integration

Author:

Jyothi B.,Ramana Reddy B.V.,Jhamb Mansi

Publisher

Elsevier BV

Reference26 articles.

1. Carbon nanotube field-effect transistor biosensor with an enlarged gate area for ultra-sensitive detection of a lung cancer biomarker;Li;ACS Appl. Mater. Interfaces,2023

2. Carbon nanotube field effect transistor (cntfet) and resistive random access memory (rram) based ternary combinational logic circuits;Zahoor;Electronics,2021

3. Gate-Overlap tunnel field-effect transistors (GOTFETs) for ultra-low-voltage and ultra-low-power VLSI applications;Vidhyadharan,2021

4. Two-dimensional transition metal dichalcogenide (TMD) materials in field-effect transistor (FET) devices for low power applications;Sridevi,2021

5. CNFET based ultra-low-power Schmitt trigger SRAM for Internet of Things (IoT) applications;Abhay;Wireless Pers. Commun.,2022

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