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Beta-Si3N4 particles as nucleation sites in multicrystalline silicon

  • Published:2016-05 Issue: Volume:109 Page:267-274
  • ISSN:1359-6454
  • Container-title:Acta Materialia
  • language:en
  • Short-container-title:Acta Materialia

Author:

Ekstrøm K.E.,Undheim E.,Stokkan G.,Arnberg L.,di Sabatino M.

Funder

The Centre for Environment-Friendly Energy Research

The Research Council of Norway

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Crystal growth behaviors of silicon during melt growth processes;Fujiwara;Int. J. Photoenergy,2012

2. Control of grain size and -orientation in multi-crystalline silicon ingots;Di Sabatino;T Indian I Met.,2009

3. The effect of silica nucleation layers on grain control of multi-crystalline silicon in directional solidification;Wong;J. Cryst. Growth,2014

4. Mono-crystalline growth in directional solidification of silicon with different orientation and splitting of seed crystals;Trempa;J. Cryst. Growth,2012

5. Fundamentals of Solidification. 4th Rev. Ed;Kurz,1998

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