Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs1−xNx/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN;Crystals;2023-10-17
2. Vapor–liquid–solid growth of highly stoichiometric gallium phosphide nanowires on silicon: restoration of chemical balance, congruent sublimation and maximization of band-edge emission;The European Physical Journal Special Topics;2022-01-03
3. Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE;Catalysts;2021-07-22
4. Direct epitaxial nanometer-thin InN of high structural quality on 4H–SiC by atomic layer deposition;Applied Physics Letters;2020-08-31
5. In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition;Chemistry of Materials;2020-04-24
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