Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction-Reference-Cited by-同舟云学术

Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction

Published:2023-03 Issue: Volume:246 Page:118707
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Chang Teng-Jan,Chen Hsing-Yang^ORCID,Wang Chin-I,Lin Hsin-Chih^ORCID,Hsu Chen-Feng,Wang Jer-Fu,Nien Chih-Hung,Chang Chih-Sheng,Radu Iuliana P.,Chen Miin-Jang^ORCID

Funder

Ministry of Science and Technology, Taiwan

Taiwan Semiconductor Manufacturing Company

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference44 articles.

1. A 28 nm HKMG super low power embedded NVM technology based on ferroelectric FETs;Trentzsch,2016

2. Ferroelectric phase transitions in nanoscale HfO2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors;Hoffmann;Nano Energy,2015

3. A FeFET based super-low-power ultra-fast embedded NVM technology for 22 nm FDSOI and beyond;Dünkel,2017

4. A new metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor (MFIS) FET for nonvolatile memory applications;JUAN;IEEE Electron Device Lett,2006

5. SrBi2Ta2O9 ferroelectric thin film capacitors: degradation in a hydrogen ambient;Hartner;Appl. Phys. A,2003

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First Demonstration of Thermally Stable Zr:HfO₂ Ferroelectrics via Inserting AlN Interlayer;IEEE Electron Device Letters;2024-09

2. Improving the ferroelectric properties of Lu doped Hf_0.5Zr_0.5O₂ thin films by capping a CeO _x layer;Nanotechnology;2024-07-04

3. Non-centrosymmetric crystallization in ferroelectric hafnium zirconium oxide via photon-assisted defect modulation;Materials Science and Engineering: R: Reports;2024-06

4. Nanoscale Phase and Orientation Mapping in Multiphase Polycrystalline Hafnium Zirconium Oxide Thin Films Using 4D‐STEM and Automated Diffraction Indexing;Small Methods;2024-05-16

5. Mitigation of field-driven dynamic phase evolution in ferroelectric Hf0.5Zr0.5O2 films by adopting oxygen-supplying electrode;Applied Surface Science;2024-03