Effect of potential on bismuth telluride thin film growth by electrochemical atomic layer epitaxy
Author:
Publisher
Elsevier BV
Subject
Electrochemistry,General Chemical Engineering
Reference35 articles.
1. Effect of processing parameters on thermoelectric properties of p-type (Bi2Te3)0.25(Sb2Te3)0.75 prepared via BMA–HP method
2. Effects of interface layer on thermoelectric properties of a pn junction prepared via the BMA-HP method
3. Thermoelectric properties of n-type (Bi2Se3)x(Bi2Te3)1−x prepared by bulk mechanical alloying and hot pressing
4. Properties of thin film thermoelectric materials: application to sensors using the Seebeck effect
5. MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications
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