Optical characterisation of anodic sulphide films on Hg1−xCdxTe (MCT) grown by the potential step method-Reference-Cited by-同舟云学术

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Optical characterisation of anodic sulphide films on Hg1−xCdxTe (MCT) grown by the potential step method

Published:2004-03 Issue:8 Volume:49 Page:1339-1347
ISSN:0013-4686
Container-title:Electrochimica Acta
language:en
Short-container-title:Electrochimica Acta

Author:

McMillan B.G.,Lilley S.J.,Berlouis L.E.A.,Cruickshank F.R.,Brevet P.F.

Publisher

Elsevier BV

Subject

Electrochemistry,General Chemical Engineering

Reference37 articles.

1. Passivation of mercury cadmium telluride surfaces

2. Current status and issues in the surface passivation technology of mercury cadmium telluride infrared detectors

3. Electrical properties of the SiO2:HgCdTe interface

4. Silicon Nitride Passivant for HgCdTe n+p Diodes

5. P.C. Catagnus, C.T. Baker, US Patent No. 3 977 018, 1976.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Properties of MCT;Mercury Cadmium Telluride;2010-09-04

2. Enhancement of the second harmonic signal from Hg1−xCdxTe (MCT) in the presence of an anodic oxide film;Journal of Electroanalytical Chemistry;2010-07

3. Studies of Hg[sub (1-x)]Cd[sub x]Te Formation by Electrochemical Atomic Layer Deposition and Investigations into Bandgap Engineering;Journal of The Electrochemical Society;2007

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