Magnetic properties of MgO-based RE-TM perpendicular magnetic tunnel junctions
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
2. Current-induced magnetization reversal in nanopillars with perpendicular anisotropy
3. Spin Torque and Field-Driven Perpendicular MRAM Designs Scalable to Multi-Gb/Chip Capacity
4. Perpendicular Magnetic Tunneling Junction With Double Barrier Layers for MRAM Application
5. Spin transfer switching in TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy
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