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Effect of Ge layer thickness on the formation of Mn5Ge3 thin film on Ge/Si (1 1 1)

  • Published:2019-03 Issue: Volume:473 Page:348-354
  • ISSN:0304-8853
  • Container-title:Journal of Magnetism and Magnetic Materials
  • language:en
  • Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Toydemir Yasasun Burcu,Onel Aykut Can,Gunduz Aykac Ilknur,Gulgun Mehmet Ali,Colakerol Arslan Leyla

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of phase segregations in Ge–Fe–Co–Ni–Mn films by high-entropy effect;Journal of Vacuum Science & Technology A;2024-01-01

2. Sublayer-Enhanced Growth of Highly Ordered Mn5Ge3 Thin Film on Si(111);Nanomaterials;2022-12-07

3. Unveiling the atomic position of C in Mn5Ge3Cx thin films;Physical Review Materials;2022-07-22

4. The magnetic properties of Mn5Ge3 thin films grown on PMN-PT;Journal of Magnetism and Magnetic Materials;2022-04

5. Strong magnetization and anisotropy of Mn5Ge3 thin films on Ge(001);Journal of Physics: Condensed Matter;2021-05-07
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