Author:
Fan Li,Chen Feng,Li Chun-mei,Hou Xun,Zhu Xin,Luo Jiang-lei,Chen Zhi-Qian
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
38 articles.
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1. Enhancing atomic ordering, magnetic and transport properties of Mn2VGa Heusler alloy thin films toward negatively spin-polarized charge injection;Acta Materialia;2024-09
2. Exploring half-metallicity and pressure-induced effect in inverse heusler alloys: First principle DFT investigations of Cr2XZ (X = Ni, Pd, Pt; Z = Al, Ga, Si, Ge);Computational Condensed Matter;2024-06
3. Negative spin polarization of Mn2VGa Heusler alloy thin films studied in current-perpendicular-to-plane giant magnetoresistance devices;Journal of Applied Physics;2024-05-22
4. Influence of main-group elements on structural, electronic, magnetic and half-metallic properties of DO3-type Mn3Z (Z = Al, Ga, In, Si, Ge, Sn, P, As and Sb) alloys - A DFT study;Computational Condensed Matter;2024-03
5. First principle studies on half-metallicity and pressure-induced half-metallic band gap in 3-d transition metal-based quaternary Heusler ScVCoZ (Z = Si, Ge, Sn, P, As, and Sb) alloys;Physica Scripta;2024-02-05