SAF exhibits better resistance to roughness edge than single-free layer
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Synthetic ferrimagnet free layer tunnel junction for magnetic random access memories
2. Size-independent spin switching field using synthetic antiferromagnets
3. End domain states and magnetization reversal in submicron magnetic structures
4. Magnetic switching properties of magnetic tunnel junctions using a synthetic ferrimagnet free layer
5. Magnetic switching field and giant magnetoresistance effect of multilayers with synthetic antiferromagnet free layers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of defects on the switching properties of the nanostructured cells of a single layer and a synthetic ferrimagnet;Current Applied Physics;2011-03
2. A Comparative Study on the Prediction of the Saddle Point Magnetic Configuration in Nanostructured Cells of Single Magnetic Thin Films and Synthetic Antiferromagnets;Japanese Journal of Applied Physics;2009-12-21
3. Calculation of the magnetic energy barrier in nanostructured cells of synthetic ferrimagnets;Journal of Applied Physics;2009-11
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