From magnetoresistor element to in-plane sensitive Hall device-Reference-Cited by-同舟云学术

From magnetoresistor element to in-plane sensitive Hall device

Published:2019-11 Issue: Volume:299 Page:111596
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Lozanova Siya,Ivanov Avgust,Roumenin Chavdar

Funder

Scientific Research Fund at the Ministry of Education and Science

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference29 articles.

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2. C.S. Roumenin, Hall effect sensor, Bulg. Patent № BG 41974 B1/1986-05-06.

3. Parallel-field hall microsensor;Roumenin;Compt. rendus ABS,1987

4. A symmetrical vertical Hall-effect device;Falk;Sens. Actuators,1990

5. Solid State magnetic sensors, elsevier, 1994; Microsensors for magnetic field;Roumenin,2006

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