High quality Hall sensors made of heavily doped n-InSb epitaxial films-Reference-Cited by-同舟云学术

High quality Hall sensors made of heavily doped n-InSb epitaxial films

Published:2004-10 Issue:1 Volume:116 Page:75-78
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Berus T.,Oszwaldowski M.,Grabowski J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Magnetic sensors—indium antimonide in pole position;Whitaker;Compd. Semicond.,1998

2. Hall sensors based on heavily doped n-InSb thin films;Oszwaldowski;Sens. Actuators A,1998

3. Effect of tin doping on InSb thin films;Oszwaldowski;Thin Solid Films,1989

4. Transport properties of Sn-doped InSb thin films and applications to Hall element

5. http://www.lakeshore.com/.

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