“Rotating” steps in Si(001) homoepitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference19 articles.
1. Atomistic Processes in the Early Stages of Thin-Film Growth
2. Continuum models of crystal growth from atomic beams with and without desorption
3. Roughening of steps during homoepitaxial growth on Si(001)
4. Origin of rippled structures formed during growth of Si on Si(001) with MBE
5. Kinetic Growth Instabilities on Vicinal Si(001) Surfaces
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1. Formation of Double Steps on Si (100): Effect of Permeability of the A-Steps;Russian Physics Journal;2020-10
2. Effects of interface steps on the valley-orbit coupling in a Si/SiGe quantum dot;Physical Review B;2019-09-26
3. Studying the Formation of Si (100) Stepped Surface in Molecular-Beam Epitaxy;Russian Physics Journal;2018-11
4. Influence of irregular growth of monoatomic steps during Si/Si(001) epitaxy on generation of surface defects;SPIE Proceedings;2013-05-22
5. Si(100)2×1 Epitaxy: A Kinetic Monte Carlo Simulation of the Surface Growth;Physics Procedia;2013
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