Crystalline silicon nitride passivating the Si(111) surface: A study of the Au growth mode-Reference-Cited by-同舟云学术

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Crystalline silicon nitride passivating the Si(111) surface: A study of the Au growth mode

Published:2005-04 Issue:2-3 Volume:579 Page:188-196
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Flammini R.,Belkhou R.,Wiame F.,Iacobucci S.,Taleb-Ibrahimi A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference62 articles.

1. Semiconductor devices: physics and technology;Sze,1985

2. DC conductivity in RF magnetron sputtered gold–silicon nitride–gold sandwich structures

3. Infrared optical properties of silicon oxynitride films: Experimental data and theoretical interpretation

4. Properties of ultrathin thermal nitrides in silicon Schottky barrier structures

5. Chemical composition of soft vacuum electron beam assisted chemical vapor deposition of silicon nitride/oxynitride films versus substrate temperature

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2. Reflection color tuning of a metal–insulator–metal cavity structure using arc plasma deposition of gold nanoparticles;Applied Surface Science;2021-10

3. Morphology and Magneto‐Transport in Exfoliated Graphene on Ultrathin Crystalline β‐Si 3 N 4 (0001)/Si(111);Advanced Materials Interfaces;2020-04-19

4. A spectroscopy and microscopy study of silicon nanoclusters grown on β-Si3N4(0 0 0 1)/Si(1 1 1) interface;Applied Surface Science;2019-02

5. Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment;Journal of Applied Physics;2016-02-07

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