Interdiffusion process in the InSe/Pt interface studied by angle-resolved photoemission
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system
2. Van der Waals type buffer layers: epitaxial growth of the large lattice mismatch system CdS/InSe/H–Si(111)
3. Optical and hybrid properties of the ZnSe/InSe/Si heterojunction
4. Au/InSe interface formation: A photoemission study
5. Thin film growth and band lineup of In2O3 on the layered semiconductor InSe
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