Formation mechanisms of polar and non-polar amorphous oxide–semiconductor interfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. Oxygen vacancy related hole fast trapping in high mobility cubic-Ge/ZrO2 interface;Journal of Physics D: Applied Physics;2023-02-16
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3. Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1− x(001) and SixGe1− x(110);The Journal of Chemical Physics;2017-02-07
4. Density functional theory simulations of amorphous high-κ oxides on a compound semiconductor alloy: a-Al2O3/InGaAs(100)-(4×2), a-HfO2/InGaAs(100)-(4×2), and a-ZrO2/InGaAs(100)-(4×2);The Journal of Chemical Physics;2011-12-28
5. Single-crystalline aluminum grown on MgAl2O4 spinel using molecular-beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-05
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