Photoluminescence study of nano-crystalline GaN and AlN grown by reactive sputtering-Reference-Cited by-同舟云学术

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Photoluminescence study of nano-crystalline GaN and AlN grown by reactive sputtering

Published:1998-05 Issue: Volume:227-230 Page:1096-1100
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Abe K.,Nonomura S.,Kobayashi S.,Ohkubo M.,Gotoh T.,Nishio M.,Nitta S.,Okamoto S.,Kanemitsu Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. III-V nitrides for electronic and optoelectronic applications

3. Electrical and Optical Properties of rf‐Sputtered GaN and InN

4. Preparation and Characterization of Wurtzitic Gan Single Crystals in Nano and Micro Scale

5. Hydrogenation of GaN, AlN, and InN

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2. Energy levels and optical properties of GaN spherical quantum dots;Superlattices and Microstructures;2015-01

3. Structural Studies of Aluminium Nitride Embedded in Amorphous Carbon;Journal of Nanoscience and Nanotechnology;2012-08-01

4. Analysis of diffuse reflectivity of a highly disordered GaN nanostructure as an antireflection coating;Optics Letters;2012-02-09

5. Photoluminescence Studies of Aluminum Nitride Nanowires;Acta Physica Polonica A;2011-02

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