Multiple-trapping model with field-dependent effects on carrier time of flight in a-Si:H-Reference-Cited by-同舟云学术

Multiple-trapping model with field-dependent effects on carrier time of flight in a-Si:H

Published:1999-11 Issue:1-3 Volume:258 Page:223-233
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Chen Wen Chao,Hamel Louis-André,Yelon Arthur

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference20 articles.

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4. W.E. Spear, in: H. Fritzsche (Ed.), Advances in Disordered Semiconductors, vol. 1, World Scientific, Singapore, 1989, p. 271

5. W.C. Chen, L.A. Hamel, in: M. Hack, E.A. Schiff, S. Wagner, R. Schropp, A. Matsuda (Eds.), Amorphous Silicon Technology – 1996, Materials Research Society, Pittsburgh, 1996, p. 759

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Field-enhanced mobility in the multiple-trapping regime;Physical Review B;2018-07-03

2. Simulation of picosecond domain time-of-flight experiments in a-Si:H;Journal of Non-Crystalline Solids;2007-12

3. Multiple-Trapping Model with Meyer-Neldel Effect and Field-Dependent Effects: Time-Of-Flight Simulations for a-Si:H;MRS Proceedings;2005

4. Rapid relaxation and electronic properties of a-Si:H;Journal of Non-Crystalline Solids;2000-11