Temperature dependence of the photoconductivity of gallium-doped hydrogenated amorphous germanium films

Author:

Reis F.T,Comedi D,Chambouleyron I

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. A. Rose, in: H. Fritzsche, D. Han, C.C. Tsai (Eds.), Some Observations on the History of Amorphous Materials, Proceedings of the International Workshop on Amorphous Semiconductors, World Scientific, Singapore, 1987

2. J. Mort e D. M. Pai, in: Photoconductivity and Related Phenomena, Elsevier, Amsterdam, 1976

3. On thermal quenching of the photoconductivity in hydrogenated amorphous silicon

4. The sign of photocarriers and thermal quenching of photoconductivity in a-SiH

5. Photoconductivity spectroscopy (CPM) on a-Ge:H at low temperatures

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1. Amorphous Silicon and Germanium;Reference Module in Materials Science and Materials Engineering;2016

2. Deep-level sensitization in Ge-SiO2 composite films observed by photocurrent spectroscopy;Thin Solid Films;2015-01

3. Dark conductivity and photoconductivity of amorphous Hg0.78Cd0.22Te thin films;Journal of Semiconductors;2011-03

4. Temperature dependence of the photoconductivity of arsenic-doped hydrogenated amorphous germanium thin films;Journal of Non-Crystalline Solids;2002-04

5. Amorphous Silicon and Germanium;Encyclopedia of Materials: Science and Technology;2001

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