TCS study of n- and p-channel amorphous silicon thin-film transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Defect creation in the accumulation layer of a-Si: H thin-film transistors
2. MRS Symp. Proc. Amorphous Silicon Technology;Nickel,1991
3. Evidence for the defect pool concept for Si dangling bond states in a-Si:H from experiments with thin film transistors
4. A defect-pool model for near-interface states in amorphous silicon thin-film transistors
5. MRS Symp. Proc. Amorphous Silicon Technology;Saleh,1991
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