Dependence of Noise Properties on Photon Flux Incident on Silicon MITATT Device at Millimeter-Wave Window Frequencies-Reference-Cited by-同舟云学术

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Dependence of Noise Properties on Photon Flux Incident on Silicon MITATT Device at Millimeter-Wave Window Frequencies

Published:2012 Issue: Volume:4 Page:431-436
ISSN:2212-0173
Container-title:Procedia Technology
language:en
Short-container-title:Procedia Technology

Author:

Banerjee Suranjana,Acharyya Aritra,Mitra Monojit

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference14 articles.

1. Leakage current enhancement in IMPATT oscillator by photoexcitation;Vyas;Eletron. Lett.,1977

2. Switching of GaAs IMPATT diode oscillator by optical illumination;Yen;Appl. Phys. Lett.,1977

3. Avalanche diode structure suitable for microwave-optical interaction;Schweighart;Solid-Sate Electron.,1978

4. Optical injection locking of impatt oscillators;Forrest;Electronics Letters,1978

5. A Small-Signal Theory of Avalanche Noise in IMPATT Diodes;Gummel;IEEE Trans. Electron Devices,1967

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1. Prospects of graphene-based heat sink and its computational thermal analysis in avalanche transit time devices;Journal of Computational Electronics;2023-05-25

2. Cutting-Edge Technologies for Terahertz Wave Generation: A Brief History from the Inception Till the Present State of The Art;Lecture Notes in Electrical Engineering;2021-09-22

3. Estimation of power density in IMPATT using different materials;International Journal of Electronics;2019-10-10

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