Synchrotron radiation induced total reflection X-ray fluorescence of low Z elements on Si wafer surfaces at SSRL — comparison of excitation geometries and conditions-Reference-Cited by-同舟云学术

Synchrotron radiation induced total reflection X-ray fluorescence of low Z elements on Si wafer surfaces at SSRL — comparison of excitation geometries and conditions

Published:2001-11 Issue:11 Volume:56 Page:2085-2094
ISSN:0584-8547
Container-title:Spectrochimica Acta Part B: Atomic Spectroscopy
language:en
Short-container-title:Spectrochimica Acta Part B: Atomic Spectroscopy

Author:

Streli C,Wobrauschek P,Kregsamer P,Pepponi G,Pianetta P,Pahlke S,Fabry L

Publisher

Elsevier BV

Subject

Spectroscopy,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Reference21 articles.

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2. SEMI Norm (M33-0998: Test Method for the Determination of Residual Surface Contamination on Silicon Wafers by means of TXRF), San Jose, CA 95134, 1998.

3. Diagnostic and monitoring tools;Fabry;IEEE Trans. Semicond. Manufacturing,1996

4. Analysis of Ni on Si-wafer surfaces using synchrotron radiation excited total reflection X-ray fluorescence analysis

5. W.M. Bullis SEMI, D.G. Seiler NIST, A.C. Diebold SEMATECH (Eds.), Semiconductor Characterization. Present Status and Future Trends, 1996.

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