Humidity sensitive memristor based on Ni–Al layered double hydroxides-Reference-Cited by-同舟云学术

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Humidity sensitive memristor based on Ni–Al layered double hydroxides

Published:2024-08 Issue: Volume:23 Page:100515
ISSN:2590-0498
Container-title:Materials Today Advances
language:en
Short-container-title:Materials Today Advances

Author:

Sun Yanmei^ORCID,Li Bingxun,Liu Ming,Zhang Zekai

Publisher

Elsevier BV

Reference62 articles.

1. Humidity effect on resistive switching characteristics of the CH3NH3PbI3 memristor;Zhang;ACS Appl. Mater. Interfaces,2021

2. An in-sensor humidity computing system for contactless human-computer interaction;Qi;Mater. Horiz.,2024

3. Proton-assisted redox-based three-terminal memristor for synaptic device applications;Liu;ACS Appl. Mater. Interfaces,2023

4. Effect of Pt/TiO2 interface on room temperature hydrogen sensing performance of memristor type Pt/TiO2/Pt structure;Haidry;Sens. Actuators, B,2017

5. Capacitive humidity sensor based on zirconium phosphate nanoplates film with wide sensing range and high response;Duan;Sens. Actuators, B,2023

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