Investigation of single-event-transient effects on n+ pocket double-gate tunnel FET

Author:

Yaghobi Hamid Reza,Eyvazi Kaveh,Karami Mohammad Azim

Publisher

Elsevier BV

Subject

Radiation

Reference27 articles.

1. In-built N+ pocket pnpn tunnel field-effect transistor;Abdi;IEEE Electron. Device Lett.,2014

2. A TCAD approach to evaluate channel electron density of double gate symmetric n-tunnel FET;Anand,2012

3. Double Gate Tunnel FET with Ultrathin Silicon Body and High-K Gate Dielectric, 2006 European Solid-State Device Research Conference;Boucart,2006

4. Study on single event effect simulation in T-shaped gate tunneling field-effect transistors;Chong;Micromachines,2021

5. Research on total ionizing dose effect and reinforcement of SOI-TFET;Chong;Micromachines,2021

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