Processes in radiation sensitive MOSFETs during irradiation and post irradiation annealing responsible for threshold voltage shift

Author:

Pejović Milić M.

Funder

Ministry of Education, Science and Technological Development of Republic of Serbia

Publisher

Elsevier BV

Subject

Radiation

Reference56 articles.

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2. Direct and pulsed current annealing of p-MOSFET based dosimeter: the “MOSkin”;Alshaikh;Australas. Phys. Eng. Sci. MEd.,2014

3. Evaluation of a low-cost commercial mosfet as radiation dosimeter;Asencio;Sens. Actuators A,2006

4. The electron irradiation effects on silicon gate dioxide used for power MOS device;Badila;Microelectron. Reliab,2001

5. Total ionizing dose effects and annealing behavior for dosimetric VDMOS devices;Bo;J. Semicond.,2010

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