1. Electrical impact of line-edge roughness on sub-45nm node standard cell;Ban;Proceedings of SPIE—The International Society for Optical Engineering,2009
2. Novel high-index resists for 193-nm immersion lithography and beyond;Blakey;Proceedings of SPIE—The International Society for Optical Engineering,2007
3. Non-CA resists for 193nm immersion lithography: effects of chemical structure on sensitivity;Blakey;Proceedings of SPIE—The International Society for Optical Engineering,2009
4. Synthesis of high refractive index sulfur containing polymers for 193nm immersion lithography: a progress report;Blakey;Proceedings of SPIE—The International Society for Optical Engineering,2006
5. Mechanism of 157 nm Photodegradation of Poly[4,5-difluoro-2,2-bis(trifluoromethyl)-1,3-dioxole-co-tetrafluoroethylene] (Teflon AF);Blakey;Macromolecules,2007