On the enhancement of effective barrier height in Schottky barrier diodes
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. Current-voltage characteristics of proton-bombarded AuGaAs contacts
2. Study of the effect of low energy electron irradiation on the density and relaxation time of metal-insulator-GaAs interface states
3. Electrical characteristics of neutron irradiation induced defects in n-GaAs
4. The effect of alpha-particle and proton irradiation on the electrical and defect properties of n-GaAs
5. Current-voltage characteristics and charge DLTS spectra of proton-bombarded Schottky diodes on semi-insulating GaAs
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3. Electrical characteristics of Au/Ti/n-GaAs contacts over a wide measurement temperature range;Physica Scripta;2014-08-01
4. References;Low Molecular Weight Organic Semiconductors;2010-10-04
5. Electron irradiation effects on the organic-on-inorganic silicon Schottky structure;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2008-08
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