Electrical and structural characterization of BF2+ self-annealed implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference7 articles.
1. Boron, fluorine, and carrier profiles for B and BF2implants into crystalline and amorphous Si
2. Residual damage in B+ and –implanted Si
3. Fully automatic apparatus for the determination of doping profiles in Si by electrical measurements and anodic stripping
4. On the Dynamic Annealing Mechanism in P+-Implanted Silicon
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1. Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology;Thin Solid Films;2008-03
2. Electrical Enhancement of Solid Phase Crystallized Poly-Si Thin-Film Transistors with Fluorine Ion Implantation;Journal of The Electrochemical Society;2006
3. Defect-impurity engineering in implanted silicon;Physics-Uspekhi;2003-08-31
4. Crystal defects production in silicon by molecular beam implantation;Ion Beam Modification of Materials;1996
5. Ion-beam-induced epitaxial crystallization and amorphization in silicon;Materials Science Reports;1990-12
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