Electrical and optical isolation of GaN by high energy ion irradiation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. The Blue Laser Diode;Nakamura,1997
2. Optical detection of magnetic resonance in electron-irradiated GaN
3. Defect Donor and Acceptor in GaN
4. Deep centers in n-GaN grown by reactive molecular beam epitaxy
5. Radiation induced defects in MOVPE grown n-GaN
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2. Effects of radiation damage on GaN epitaxial layer arising from argon ion implantation for edge termination;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-05
3. Structural and mechanical modifications of GaN thin films by swift heavy ion irradiation;Vacuum;2022-01
4. Damage to epitaxial GaN layer on Al2O3 by 290-MeV 238U32+ ions irradiation;Scientific Reports;2018-03-07
5. Deep level transient spectroscopy characterisation of Xe irradiated GaN;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-10
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